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A 1.6/1.8/2.1/2.4-GHz Multiband CMOS Low Noise Amplifier

Author(s): Balemarthy Deepak | Paily Roy

Journal: IETE Journal of Research
ISSN 0377-2063

Volume: 54;
Issue: 2;
Start page: 97;
Date: 2008;
Original page

The paper describes an inductively sources degenerated multiband low noise amplifier (LNA) designed in a standard CMOS 0.18 pm TSMC process. The multiband LNA can be tuned to 1.6-GHz, 2.1 GHz and 2.4 GHz with the help of switches. The narrowband gain and impedance matching are obtained at the required frequency bands by appropriately switching the Tranconductance, input and output capacitances. The switches are realized using metal-oxide-semiconductor (MOS) transistors. The designed LNA exhibits a gain of 16.2dB, 16dB, 15.5dB and a noise figure of 3.3dB, 3.5dB and 3.2dB at 1.6, 1.8, 2.1 and 2.4 GHz respectively. The LNA design is carried out using Mentor Graphics Eldo software.
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