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Abnormal photovoltaic effect in structure with a barrier Shottky-Mott's

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Author(s): Karimov A. V. | Yodgorova D. M. | Saidova R. A. | Giyasova F. A.

Journal: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
ISSN 2225-5818

Issue: 1;
Start page: 27;
Date: 2008;
Original page

Keywords: double-base structure | photovoltaic effect | impurity space charge layer | heterojunction | barrier Mott's

ABSTRACT
The results of investigation of the photovoltaic effect observed at room temperature are presented. The effect is accompanied by a change in the photocurrent sign in the transition from the intrinsic absorption region to the impurity absorption region in the spectrum range from 0,4 to 2 m in oxygen-doped double-base Ag-N0AlGaAs-n+GaAs-n0GaInAs-Au-structure. Such structures are of interest for fiber-optical systems.
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