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An Accurate Method for Extracting the Critical Field in Short Channel NMOS Devices

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Author(s): Y. Amhouche | A. El Abbassi | K. Raïs | R. Rmaily

Journal: Active and Passive Electronic Components
ISSN 0882-7516

Volume: 24;
Issue: 3;
Start page: 135;
Date: 2001;
Original page

Keywords: Drain saturation voltage | Critical field | Substrate current | Effective mobility | Saturation velocity.
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