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AlGaAs/GaAs heterojunction phototransistor with Zn delta-doped base region

Author(s): Beata SCIANA | Damian RADZIEWICZ | Damian PUCICKI | Marek TLACZALA | Jaroslav KOVAC | Rudolf SRNANEK

Journal: Optica Applicata
ISSN 0078-5466

Volume: 35;
Issue: 3;
Start page: 645;
Date: 2005;
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Keywords: heterojunction phototransistor | Zn delta-doped GaAs | EC-V measurements | photovoltage spectroscopy | micro-Raman spectroscopy

The paper presents the technology and characterisation of n-p-n AlGaAs/GaAs heterojunction phototransistor (HPT) with a thin (50 nm) Zn delta-doped GaAs base region. Such a construction of the HPT transistor was applied to obtain higher current gain and lower power consumption. The electrical and optical properties of the HPT transistor were examined using electrochemical capacitance-voltage (EC-V) measurements, photovoltage, photocurrent and micro-Raman spectroscopies. The measured and simulated I-U characteristics as well as results of time response measurements are also presented and discussed. All investigations were carried out without a base bias (“floating base”).
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