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Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep SubmicrometerMOSFET'S

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Author(s): Y. Amhouche | A. El Abbassi | K. Raïs | R. Rmaily

Journal: Active and Passive Electronic Components
ISSN 0882-7516

Volume: 24;
Issue: 3;
Start page: 201;
Date: 2001;
Original page

Keywords: Submicrometer MOSFET's | Impact ionization | Substrate current | Temperature | Channel length.
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