Academic Journals Database
Disseminating quality controlled scientific knowledge

The Asymmetry of the Distribution Density Volume Uncompensated Charge at the Metallurgical p-n Junction

Author(s): A.S. Mazinov | А.I. Shevchenko | M.A. Bykov

Journal: Journal of Nano- and Electronic Physics
ISSN 2077-6772

Volume: 4;
Issue: 3;
Start page: 03026-1;
Date: 2012;
VIEW PDF   PDF DOWNLOAD PDF   Download PDF Original page

Keywords: Shallow p-n junction | Doping profile of the crystal | Diffusion activation energy for diffusion | Density of the charge distribution | Uncompensated charge p-n junctio

The features of the formation of shallow junction and its calculation for a solar cell based on single-crystal silicon with front boron were considered. The ambiguity of the calculated profiles recompensating impurity, which is dependent on the accuracy of the constants of diffusion equations, was shown.
Why do you need a reservation system?      Affiliate Program