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The Asymmetry of the Distribution Density Volume Uncompensated Charge at the Metallurgical p-n Junction

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Author(s): A.S. Mazinov | А.I. Shevchenko | M.A. Bykov

Journal: Journal of Nano- and Electronic Physics
ISSN 2077-6772

Volume: 4;
Issue: 3;
Start page: 03026-1;
Date: 2012;
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Keywords: Shallow p-n junction | Doping profile of the crystal | Diffusion activation energy for diffusion | Density of the charge distribution | Uncompensated charge p-n junctio

ABSTRACT
The features of the formation of shallow junction and its calculation for a solar cell based on single-crystal silicon with front boron were considered. The ambiguity of the calculated profiles recompensating impurity, which is dependent on the accuracy of the constants of diffusion equations, was shown.
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