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Calculation of the Point Defects Ensemble in Zinc Sulfide Single Crystals and Films

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Author(s): D.I. Kurbatov

Journal: Journal of Nano- and Electronic Physics
ISSN 2077-6772

Volume: 4;
Issue: 3;
Start page: 03027-1;
Date: 2012;
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Keywords: Point defects | Zinc sulfide | Quasi-chemical formalism | Single crystals | Films | Defects concentratio

ABSTRACT
In work calculation of concentration of the neutral and charged point defects, positions of Fermi level and free charge carriers in zinc sulfide single crystals and films depending on their condensation conditions was carried out. For calculations used the experimentally found energy levels of defects in ZnS band gap.
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