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Capacitance-voltage characteristics of GaAs ion-implanted structures

Author(s): Gorev N. B., | Kodzhespirova I. F. | Privalov E. N.

Journal: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
ISSN 2225-5818

Issue: 4;
Start page: 52;
Date: 2008;
Original page

Keywords: gallium arsenide | ion-implanted structure | Schottky barrier | capacitance-voltage characteristic | deep traps

A noniterative numerical method is proposed to calculate the barrier capacitance of GaAs ion-implanted structures as a function of the Schottky barrier bias. The features of the low- and high-frequency capacitance-voltage characteristics of these structures which are due to the presence of deep traps are elucidated.
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