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Cell Stability Analysis of Conventional 6T Dynamic 8T SRAM Cell in 45NM Technology

Author(s): K. Dhanumjaya | M. Sudha | MN.Giri Prasad | K.Padmaraju

Journal: International Journal of VLSI Design & Communication Systems
ISSN 0976-1527

Volume: 3;
Issue: 2;
Start page: 41;
Date: 2012;
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Keywords: SRAM | Leakage Current | N-curve | Read stability | Write-ability | Cadence | Virtuoso | 45nm Technology.

A SRAM cell must meet requirements for operation in submicron/nano ranges. The scaling of CMOS technology has significant impact on SRAM cell -- random fluctuation of electrical characteristics andsubstantial leakage current. In this paper we present dynamic column based power supply 8T SRAM cell and comparing the proposed SRAM cell with respect to conventional SRAM 6T in various aspects. To verify read stability and write ability analysis we use N-curve metric. Simulation results affirmed that proposed 8T SRAM cell achieved improved read stability, read current, and leakage current in 45nm Technology comparing with conventional 6T SRAM using cadence virtuoso tool.
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