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Characteristics of photodiodes with «intrinsic oxide — InSe» structure, irradiated with high-energy electrons

Author(s): Sydor O. N. | Sydor О. А. | Kovalyuk Z. D. | Dubinko V. I.

Journal: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
ISSN 2225-5818

Issue: 6;
Start page: 29;
Date: 2012;
Original page

Keywords: layered crystals | indium selenide | photodiode | high-energy electrons | radiation defects

The article describes the research of the influence of electrons with an effective energy of 12 MeV in the 0,33—33 Mrad dose range on the electrical and photovoltaic properties of photodiodes with «intrinsic oxide — p-InSe» structure. It has been found that the minimum dose improves their basic parameters, while the maximum dose significantly reduces the short circuit current and devices photosensitivity. In this case, an increase in volt-watt sensitivity and a minimal increase in coupling coefficient of the I-V characteristic are observed.
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