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Characteristics of quantum beats in InGaN/GaN quantum well

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Author(s): Fei Gao | Guiguang Xiong

Journal: Optica Applicata
ISSN 0078-5466

Volume: 35;
Issue: 4;
Start page: 919;
Date: 2005;
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Keywords: InGaN/GaN | quantum wells | quantum beats | effective mass

ABSTRACT
A L-type three level atom in the InGaN/GaN quantum wells is formed by the lowest energy level of conductive electrons and the highest sub-bands of light and heavy hole. With the excitation of the coherent light field, a quantum beat spectrum is obtained. The quantum beat spectrum can be calculated by using the theory of effective mass. Quantum beats do not exist in all polarization directions. The influence of quantum well width and the concentration of In on the spectra of quantum beats is also discussed.
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