Academic Journals Database
Disseminating quality controlled scientific knowledge

Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach

Author(s): Ashutosh Kumar | Michael Latzel | C. Tessarek | S. Christiansen | R. Singh

Journal: Journal of Nano- and Electronic Physics
ISSN 2077-6772

Volume: 5;
Issue: 2;
Start page: 02001-1;
Date: 2013;
VIEW PDF   PDF DOWNLOAD PDF   Download PDF Original page

Keywords: GaN | Nanorod | Nanomasking | Reactive-ion etching | Cathodoluminescence | Band-edge luminescence | Yellow band luminescenc

Large thermal mismatch between GaN surface and sapphire results in compressive stress in Gallium Nitride (GaN) layer which degrades the device performance. Nanostructuring the GaN can reduce this stress leading to reduction in Quantum Confined Stark Effect. Aligned GaN nanorods based nanodevices have potential applications in electronics and optoelectronics. This paper describes the fabrication of GaN nanorods using Ni nanomasking and reactive ion etching. The morphology of GaN nanorods was studied by field emission scanning electron microscopy. The optical properties of GaN nanorods were studied by Cathodoluminescence (CL) spectroscopy. CL results revealed the existence of characteristic band-edge luminescence and yellow band luminescence.
Why do you need a reservation system?      Save time & money - Smart Internet Solutions