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Characterization of Photoinduced Current in Poly-Si Solar Cell by Employing Photoconductive Atomic Force Microscopy (PC-AFM)

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Author(s): Jinhee Heo

Journal: Transactions on Electrical and Electronic Materials
ISSN 1229-7607

Volume: 13;
Issue: 1;
Start page: 35;
Date: 2012;
Original page

Keywords: Solar cell | Photoconductive AFM | Photoinduced current | Contact resistance | Photovoltaic effect

ABSTRACT
In this study, we have attempted to characterize the photovoltaic effect in real-time measurement of photoinducedcurrent in a poly-Si-based solar cell using photoconductive atomic force microscopy (PC-AFM). However, the highcontact resistance that originates from the metal-semiconductor Schottky contact disturbs the current flow andmakes it difficult to measure the photoinduced current. To solve this problem, a thin metallic film has been coatedon the surface of the device, which successfully decreases the contact resistance. In the PC-AFM analysis, we useda metal-coated conducting cantilever tip as the top electrode of the solar cell and light from a halogen lamp wasirradiated on the PC-AFM scanning region. As the light intensity becomes stronger, the current value increases upto 200 μA at 80 W, as more electrons and hole carriers are generated because of the photovoltaic effect. The ratio ofthe conducting area at different conditions was calculated, and it showed a behavior similar to that generated by aphotoinduced current. On analyzing the PC-AFM measurement results, we have verified the correlation between thelight intensity and photoinduced current of the poly-Si-based solar cell in nanometer scale.

Tango Jona
Tangokurs Rapperswil-Jona

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