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Circuit Edit Technology for Submicron Structures in Semiconductor Devices

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Author(s): Dr. A. M. Khan

Journal: International Journal of Engineering and Advanced Technology
ISSN 2249-8958

Volume: 2;
Issue: 5;
Start page: 255;
Date: 2013;
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Keywords: VLSI | FIB | Circuit Edit | Laser | IC

ABSTRACT
Aluminum and copper metal structures with submicron dimension are widely used in semiconductor devices.Precise cutting of these metal lines is one of the fundamentalrequirements in VLSI Circuit Edit technology. Cutting of thesesub micron metal lines should ensure good electrical isolationwhile maintaining nil / minimal damage to closely spaced adjacentmetal structures. In this experimental work, both focused ionbeam (FIB) technology and focused Laser beam technology havebeen explored. Relative merits and demerits of these technologieshave been discussed. Laser beam assisted technology is found tobe viable for cutting metal lines if spacing between metal lines isgreater than two microns. Focused ion beam assisted technologyis found to be quite effective in cutting metal structures whenspacing between metal lines is less than a micron.
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