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CNFET Based Basic Gates and a Novel FullAdder Cell

Author(s): Fazel Sharifi | Amir Momeni | keivan Navi

Journal: International Journal of VLSI Design & Communication Systems
ISSN 0976-1527

Volume: 3;
Issue: 3;
Start page: 11;
Date: 2012;
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Keywords: CNFET | MOSFET | Full-Adder cell | Basic gates.

In this paper two novel high performance designs for AND and OR basic gates and a novel Full-Adder Cell are presented. These designs are based on carbon nanotube technology. In order to compare the proposeddesigns with previous ones both MOSFET based and CNFET based circuits are selected. By the way the proposed designs have better performance in comparison with previous designs in terms of speed, power consumption and power-delay product (PDP).
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