Author(s): Chaudhry Amit | Roy Nath Jatinder
Journal: Serbian Journal of Electrical Engineering
ISSN 1451-4869
Volume: 7;
Issue: 2;
Start page: 185;
Date: 2010;
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Keywords: inversion quantization | hole | modeling | inversion layers | MOS devices
ABSTRACT
In this paper, an analytical model has been developed to study inversion layer quantization in nanoscale Metal Oxide Semiconductor Field Effect Oxide p-(MOSFET). n-MOSFETs have been studied using the variation approach and the p-MOSFETs have been studied using the triangular well approach. The inversion charge density and gate capacitance analysis for both types of transistors has been done. There is a marked decrease in the inversion charge density and the capacitance of the p-MOSFET as compared to n-MOSFETs. The results are compared with the numerical results showing good agreement.
Journal: Serbian Journal of Electrical Engineering
ISSN 1451-4869
Volume: 7;
Issue: 2;
Start page: 185;
Date: 2010;
VIEW PDF
DOWNLOAD PDF Original pageKeywords: inversion quantization | hole | modeling | inversion layers | MOS devices
ABSTRACT
In this paper, an analytical model has been developed to study inversion layer quantization in nanoscale Metal Oxide Semiconductor Field Effect Oxide p-(MOSFET). n-MOSFETs have been studied using the variation approach and the p-MOSFETs have been studied using the triangular well approach. The inversion charge density and gate capacitance analysis for both types of transistors has been done. There is a marked decrease in the inversion charge density and the capacitance of the p-MOSFET as compared to n-MOSFETs. The results are compared with the numerical results showing good agreement.