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Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs

Author(s): Weihuang Yang | Jinchai Li | Wei Lin | Shuping Li | Hangyang Chen | Dayi Liu | Xu Yang | Junyong Kang

Journal: AIP Advances
ISSN 2158-3226

Volume: 3;
Issue: 5;
Start page: 052103;
Date: 2013;
Original page

Dense and atomically flat AlN film with root-mean-square roughness value of 0.32 nm was grown on sapphire substrate at a relatively lower temperature by using a three-step epitaxy technique. On the basis of this AlN template, AlGaN-based multiple quantum wells (MQWs) with atomically flat hetero-interfaces were epitaxially grown to suppress nonradiative recombination by introducing In as a surfactant during simultaneous source supply. As a result, single intense- and narrow-peaked photoluminescence was obtained from the MQWs. Finally, the deep ultraviolet light emitting diodes with well-behaved I-V characteristic and strong electroluminescence in the range of 256–312 nm were fabricated successfully.
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