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Crosstalk Enhancement in 32 nm FD SOI MOSFET using HR Substrate and Multilayer BOX

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Author(s): Parisa Tavanazadeh | Arash Daghighi | Homayoon Mahdavi Nasab

Journal: Majlesi Journal of Electrical Engineering
ISSN 2008-1413

Volume: 5;
Issue: 2;
Start page: 38;
Date: 2011;
Original page

Keywords: Ultra Thin Body Silicon-on-Insulator MOSFET | Parasitic Capacitance | High Resistivity Substrate | Crosstalk | Diamond

ABSTRACT
In this paper, the crosstalk in 32 nm UTB SOI MOSFET is examined by using a new structure, a high resistivity substrate, and a multilayer BOX (SiO2-Diamond). The electrical and thermal characteristics of the conventional SOI and a multilayer BOX SOI are compared, and it is concluded that parasitic capacitances and crosstalk are improved by incorporating multilayer BOX to a HR Substrate. In a conventional HR FD SOI, crosstalk is approximately -121dB, while by incorporating multilayer BOX substrate and increasing the thickness of the Diamond to 100nm, crosstalk can be reduced by 20%.
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