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Defect Optical and Scintillation Properties of Lu2Si2O7:Ce Single Crystal Grown by Floating Zone Method

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Author(s): FENG He, REN Guo-Hao, DING Dong-Zhou, LI Huan-Ying, XU Jun, YANG Qiu-Hong, XU Jia-Yue

Journal: Journal of Inorganic Materials
ISSN 1000-324X

Volume: 28;
Issue: 8;
Start page: 891;
Date: 2013;
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Keywords: Lu2Si2O7£ºCe; floating zone method; single crystal; defects; scintillation properties

ABSTRACT
Floating zone (Fz) method was employed to grow the Lu2Si2O7 (LPS):0.5%Ce single crystal. The crack, defect, optical and scintillation properties of LPS:Ce were studied. The electron probe microanalysis (EPMA), transmittance spectrum, X-ray excited luminescence (XEL) spectra, photoluminescence spectra and decay curves (from 77 K to 500 K) were recorded. The cleavage and thermal stress cracks are detected in the as-grown crystal. Two kinds of inclusions are found through the EPMA: one is [Si3O9]6- and anion radicals and the other is the excess SiO2. Part of Ce3+ in the LPS:Ce sample was oxidized into Ce4+ in the air growth atmosphere. Fz grown LPS:0.5%Ce sample presents high luminescence efficiency, which is 32000 ph/MeV. As the temperature increases, the photoluminescence curves move towards the longer wavelength direction and broaden, leading to the increasing self-absorption. The rollover point of the decay time locates at 450 K, indicating that the LPS:Ce scintillator is a kind of high performance scintillator which can be applied in the high temperature environment.

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