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Deposition of the TiN and TiO2 films in the inverted cylindrical direct-current magnetron by a reactive sputtering

Author(s): Kostin E. G. | Demchyshyn A. V.

Journal: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
ISSN 2225-5818

Issue: 4;
Start page: 47;
Date: 2008;
Original page

Keywords: reactive sputtering | magnetron | optical radiation of plasma | TiN films | TiO2 films

Results of research of optical radiation of discharge plasma in a wave range 350 – 820 nm and discharge voltage of an inverted cylindrical magnetron at various flows of reactive gases (N2, О2) are presented. Changes of discharge voltage have features which can be compared to a films composition and with character of changes of intensity of spectral lines of titanium atoms and molecules of reacting gases. It is shown, that the control of a deposition of TiN and TiO2 films it is possible to carry out, both with the help of measuring of discharge voltage, and with the help of the optical control of intensity of Ti, N2, O2 lines emitted by plasma. The optical control simultaneously several components of the gas medium is more informative. Optimum conditions of synthesis of stoichiometric TiN and TiO2 films are determined. The X-ray analysis was carried out, the microhardness of TiN films and refractive index of TiO2 films, received in optimum requirements, was measured.
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