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Design and Analysis of Double-Gate MOSFETs for Ultra-Low Power Radio Frequency Identification (RFID): Device and Circuit Co-Design

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Author(s): Ramesh Vaddi | Rajendra P. Agarwal | Sudeb Dasgupta | Tony T. Kim

Journal: Journal of Low Power Electronics and Applications
ISSN 2079-9268

Volume: 1;
Issue: 2;
Start page: 277;
Date: 2011;
Original page

Keywords: device/circuit co-design | subthreshold logic | ultra low power | asymmetric DGMOSFET | independent gate DGMOSFET | high efficient rectifier for RFID

ABSTRACT
Recently, double-gate MOSFETs (DGMOSFETs) have been shown to be more optimal for ultra-low power circuit design due to the improved subthreshold slope and the reduced leakage current compared to bulk CMOS. However, DGMOSFETs for subthreshold circuit design have not been much explored in comparison to those for strong inversion-based design. In this paper, various configurations of DGMOSFETs, such as tied/independent gates and symmetric/asymmetric gate oxide thickness are explored for ultra-low power and high efficient radio frequency identification (RFID) design. Comparison of bulk CMOS with DGMOSFETs has been conducted in ultra-low power subthreshold digital logic design and rectifier design, emphasizing the scope of the nano-scale DGMOSFET technology for future ultra-low power systems. The DGMOSFET-based subthreshold logic improves energy efficiency by more than 40% compared to the bulk CMOS-based logic at 32 nm. Among the various DGMOSFET configurations for RFID rectifiers, symmetric tied-gate DGMOSFET has the best power conversion efficiency and the lowest power consumption.
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