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Design of a Low-Noise Front-End Readout Circuit for CdZnTe Detectors

Author(s): Bo Gan | Tingcun Wei | Wu Gao | Huiming Zeng | Yann Hu

Journal: Journal of Signal and Information Processing
ISSN 2159-4465

Volume: 04;
Issue: 02;
Start page: 123;
Date: 2013;
Original page

Keywords: CdZnTe | Detector | Low Noise | Front-End | Readout | CMOS

In this paper, the design of a novel low-noise front-end readout circuit for Cadmium zinc telluride (CdZnTe) X-ray and γ-ray detectors is described. The front-end readout circuits include the charge sensitive amplifier (CSA) and the CR-RC shaper is implemented in TSMC 0.35 μm mixed-signal CMOS technology. The die size of the prototype chip is 4.9 mm × 2.2 mm. The simulation results show that, the noise performance is 46 electrons + 10 electrons/pF, and power consumption is 1.65 mW per channel.
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