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Determination of Characteristic Relaxation Times and Their Significance in A Copper Oxide Thin Film

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Author(s): Moses E Emetere | Muhammad M Bakeko

Journal: Journal of Theoretical Physics and Cryptography
ISSN 2322-3138

Volume: 4;
Start page: 1;
Date: 2013;
Original page

Keywords: Disordered structures | amorphous and glassy solids | Specific materials: fabrication | treatment | testing | and analysis.

ABSTRACT
The copper oxide thin film was characterized using both the theoretical and experimental approach at different oxidation temperatures between 150oC to 450oC. Two experimental methodologies were combined with theoretical model to investigate the effect of time relaxations on the samples. The time relaxation of the current predicted the suitability of the sample to be used to fabricate either solar cell or semiconductor. The time relaxation of the voltage showed the degree of disorderliness created within the sample during fabrication.
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