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Detrmination of the Si-Pin Detector Active Zone Thickness Using Analytic Line Intensity Wavelength Dependence of the Single-Component Standards

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Author(s): А.А. Mamaluy | L.P. Fomina | A.I. Mikhailov

Journal: Journal of Nano- and Electronic Physics
ISSN 2077-6772

Volume: 2;
Issue: 4;
Date: 2010;
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Keywords: X-Ray Fluorescent Radiation | Analytical Lines | Detector | Active Zone | Secondary Radiator

ABSTRACT
The simple procedure of the detector active zone thickness determination is proposed, in which the fluxes of fluorescent radiation analytical lines from single-component samples excited by monochromatic radiation of a secondary radiator are used as the known fluxes. The superposition of experimental and calculated curves of the analytical line intensity versus the wavelength allows determination of the active zone thickness d = 170 μm with an accuracy of ± 10 μm.
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