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Development of a construction and manufacturing techniques of complementary transistors for the radiation tolerant integrated circuits

Author(s): Gorban A. N. | Kravchina V. V.

Journal: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
ISSN 2225-5818

Issue: 3;
Start page: 23;
Date: 2011;
Original page

Keywords: complementary transistors | dielectric insulation | engineering process | radiation hardened IC

The construction of vertical complementary transistors with the full dielectric isolation is developed, new technolo-gical processes of creation on their basis the radiation tolerant integrated circuits with parameters which provide low values of a leakage current along with the considerable values of a forward current and breakdown voltage at the information signals exchange frequency of about 500 kHz are developed.
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