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Diagnostics of deep centers on the border of film–substrate in thin-film all-epitaxial structures of GaAs

Author(s): Gorev N. B. | Kodzhespirova I. F. | Privalov E. N.

Journal: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
ISSN 2225-5818

Issue: 4;
Start page: 53;
Date: 2010;
Original page

Keywords: gallium arsenide | epitaxial structure | Schottky barriers | capacity-voltage characteristic | deep centers

A simple method for the determination of the concentration of vacant deep traps in the vicinity of the «film — substrate» interface is proposed. The method is based on determining the increase in the width of the conducting channel under extrinsic illumination from the shift of the inflection point in the capacitance-voltage curve. The reliability of the method is confirmed by measurement of the concentration of vacant deep traps in GaAs wafers with and without a buffer layer.
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