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The diamond RF-transistor model

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Author(s): Altukhov A. A. | Zyabluk K. N. | Mityagin A. Yu. | Talipov N. H. | Chucheva G. V.

Journal: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
ISSN 2225-5818

Issue: 6;
Start page: 13;
Date: 2011;
Original page

Keywords: field-effect diamond RF-transistor | fluent shutter model | volt-ampere characteristic | maximum power of transistor | gain of the transistor

ABSTRACT
In this work is shown that fluent shutter model it is enough well describes work field-effect diamond RF-transistors. Using this model, possible to calculate transistor parameters used electronic parameters of the diamond structure with δ-doped (hydrogen or boron) layer and geometric parameter transistor element. Proof, are calculated by us main parameters model RF-transistor, which it is enough close comply with published experimental result of the measurements real RF-transistors.
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