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Driving of The Parameters Of GaAs:Si p-n-Structures by Giratronic Irradiation

Author(s): G.A. Sukach | V.V. Kidalov

Journal: Journal of Nano- and Electronic Physics
ISSN 2077-6772

Volume: 3;
Issue: 4;
Date: 2011;
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Keywords: Giratronic irradiation | Light-emitting structure | Impurities | Control the p-n- junction | Thermoelastic stresses.

It is shown that by using giratronic irradiation it is possibility to control the p-n junction in an already fabricated light-emitting structure. Shift compensated field emitting structure based on GaAs:Si, due to the motion of impurities in the field of thermoelastic stresses appearing during cooling of the samples after giratronic irradiation.
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