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The dual effects of Al-doping on the ferromagnetism of Zn0.98–yEr0.02AlyO thin films

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Author(s): Hong-Ming Chen | Xue-Chao Liu | Shi-Yi Zhuo | Ze Xiong | Ren-Wei Zhou | Jian-Hua Yang | Er-Wei Shi

Journal: AIP Advances
ISSN 2158-3226

Volume: 3;
Issue: 8;
Start page: 082121;
Date: 2013;
Original page

ABSTRACT
Zn0.98–yEr0.02AlyO (0 ≤ y ≤ 0.04) thin films have been prepared by inductively coupled plasma enhanced physical vapor deposition method. It is found that Er3+ substitutes Zn2+ in ZnO lattice without forming any magnetic secondary phase. Al-doping has dual effects on the electron transport and magnetic properties of Er-doped ZnO films, wherein AlZn and Ali play different roles. When 0 ≤ y ≤ 0.02, the dominant AlZn increases and induces both carrier concentration and saturation magnetization (Ms) increasing. When 0.02 < y ≤ 0.04, Ali becomes main defect and enhances the probability of electron scattering, thus reduces the Ms.
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