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Dynamic Characterization of InAs/AlGaAs Broadband self-Assembled Quantum Dot Lasers

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Author(s): Hadi Arabshahi

Journal: TELKOMNIKA
ISSN 1693-6930

Volume: 10;
Issue: 2;
Date: 2012;
Original page

ABSTRACT
In this research we have solved the rate equations for InAs/AlGaAs broadband self-assembled quantum dot (QD) laser with considering the homogeneous broadening (HB) and inhomogeneous broadening (IHB) of the linear optical gain using fourth order Runge-Kutta method. We show that enhancing the injected current results in improving the dynamic characteristics, and increasing the steady-state photons, and show that with increase of the full width at half maximum (FWHM) of HB, the threshold current, turn-on delay and steady-state photons increase. Our calculation results also show that the simulated broadband self-assembled QD laser does not reach the complete steady-state when HB is near or equal to IHB.
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