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Effect of annealing temperature on the value of contact resistance of ohmic contacts to InP

Author(s): Novitskyi S.V.

Journal: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
ISSN 2225-5818

Issue: 4;
Start page: 32;
Date: 2012;
Original page

Keywords: indium phosphide | ohmic contact | dislocation | the specific contact resistance

It is experimentally confirmed that the temperature dependence of specific contact resistance of ohmic contacts Au—TiB2—Ge—Au—n—n+—n++-InP is described with the current transport model with a high density of dislocations in the contact region of the semiconductor. The samples used in the experiment were obtained at different annealing temperatures.
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