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Effects of Dielectric Constant Mismatch on Capacitance-voltage Curve

Author(s): Mao Ling-Feng

Journal: IETE Journal of Research
ISSN 0377-2063

Volume: 55;
Issue: 5;
Start page: 218;
Date: 2009;
Original page

Keywords: Capacitance | High-K gate dielectric | Inversion | Metal-oxide-semiconductor field effect transistor.

This paper investigates the effects of a dielectric-constant mismatch between gate dielectric and silicon substrate on the capacitance-voltage curve of high-K MOS structures, numerically, via fully self-consistent solutions of Schrφdinger and Poisson equations. Results demonstrate that the capacitance-voltage curve of a high-K MOS structure compared to that of SiO 2 MOS structure with the same equivalent oxide thickness shifts to lower gate voltage with increasing dielectric constant of the gate dielectric, thickness of gate dielectric, and acceptor density in silicon substrate. The results also demonstrate that a higher dielectric thickness, thicker gate dielectric, and higher acceptor density for a high-K MOS structure lead to a larger increase in capacitance compared to SiO 2 MOS structure with the same -equivalent oxide thickness.
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