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Electron Traps in GaAs Grown by Molecular Beam Epitaxy on On-axis (100) and Off-axis Substrates

Author(s): R. Sarmiento | A. Somintac | L. Guiao | F. Agra | A. Salvador

Journal: Science Diliman
ISSN 0115-7809

Volume: 15;
Issue: 1;
Start page: 6;
Date: 2003;
Original page

Keywords: Deep level transient spectroscopy | Molecular Beam Epitaxy

Deep level transient spectroscopy (DLTS) was used to characterize the electron traps present in the bulkGaAs grown by molecular beam epitaxy (MBE) on on-axis (100) and off-axis (4° towards the (111) Adirection) substrates. Two electron traps were obtained for each sample having identical correspondingpeak locations in the DLTS spectra. The layer grown on the on-axis substrate has electron traps withactivation energies of EC–0.454 eV and EC–0.643 eV and capture cross-sections of 1.205 x 10-14 cm2 and3.88 x 10-15 cm2, respectively. The layer grown on the off-axis substrate has traps with activation energiesof EC–0.454 eV and EC–0.723 eV and capture cross-sections of 2.060 x 10-14 cm2 and 4.40 x 10-14 cm2.The electron traps are possibly the M4 (or EL3) and EL2 (or EB4) traps commonly found in GaAs layers.Due to the high trap concentrations obtained and to the non-uniform trap concentration profile, Asdesorption may be considerable during growth.
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