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Epitaxial Catalyst-Free Growth of InN Nanorods onc-Plane Sapphire

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Author(s): Shalish I | Seryogin G | Yi W | Bao JM | Zimmler MA | Likovich E | Bell DC | Capasso F | Narayanamurti V

Journal: Nanoscale Research Letters
ISSN 1931-7573

Volume: 4;
Issue: 6;
Start page: 532;
Date: 2009;
Original page

Keywords: InN | Nanorods | Nanowires | Epitaxial growth | Sapphire | Catalyst-free | Ni

ABSTRACT
Abstract We report observation of catalyst-free hydride vapor phase epitaxy growth of InN nanorods. Characterization of the nanorods with transmission electron microscopy, and X-ray diffraction show that the nanorods are stoichiometric 2H–InN single crystals growing in the [0001] orientation. The InN rods are uniform, showing very little variation in both diameter and length. Surprisingly, the rods show clear epitaxial relations with thec-plane sapphire substrate, despite about 29% of lattice mismatch. Comparing catalyst-free with Ni-catalyzed growth, the only difference observed is in the density of nucleation sites, suggesting that Ni does not work like the typical vapor–liquid–solid catalyst, but rather functions as a nucleation promoter by catalyzing the decomposition of ammonia. No conclusive photoluminescence was observed from single nanorods, while integrating over a large area showed weak wide emissions centered at 0.78 and at 1.9 eV.

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