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Estimation of power dissipation of a 4H-SiC Schottky barrier diode with a linearly graded doping profile in the drift region

Author(s): Rajneesh Talwar

Journal: Maejo International Journal of Science and Technology
ISSN 1905-7873

Volume: 3;
Issue: 03;
Start page: 352;
Date: 2009;
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Keywords: Schottky barrier diode | 4H-SiC | power dissipation | breakdown voltage

The aim of this paper is to establish the importance of a linearly graded profile in the drift region of a 4H-SiC Schottky barrier diode (SBD). The power dissipation of the device is found to be considerably lower at any given current density as compared to its value obtained for a uniformly doped drift region. The corresponding values of breakdown voltages obtained are similar to those obtained with uniformly doped wafers of 4H-SiC.
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