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Evaluation of Electrical Stress Effect on Class F Power Amplifier by Simulation

Author(s): J. S. Yuan | E. Kritchanchai

Journal: Advances in Microelectronic Engineering
ISSN 2327-7300

Volume: 1;
Issue: 1;
Start page: 1;
Date: 2013;
Original page

Keywords: Class F | Hot Electron | Oxide Stress | Power Amplifier | Reliability

A class F power amplifier has been designed using TSMC 0.18 µm CMOS mixed-signal RF technology at 5.8 GHz. The PA’s output power and power-added efficiency have been evaluated using the ADS simulation. Physical insight of transistor operation in the RF circuit environment has been examined using the Sentaurus mixed-mode device and circuit simulation. The transient drain-source voltage waveform indicates that the output stage transistor is under much higher voltage stress than that of the input stage transistor. The hot electron effect and device self-heating degrade the output power and power-added efficiency of the power amplifier, especially when both the input transistor and output transistor suffer high impact ionization rates and lattice heating.
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