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Fabrication and characteristics of porous germanium films

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Author(s): Chengbin Jing, Chuanjian Zhang, Xiaodan Zang, Wenzheng Zhou, Wei Bai, Tie Lin and Junhao Chu

Journal: Science and Technology of Advanced Materials
ISSN 1468-6996

Volume: 10;
Issue: 6;
Start page: 065001;
Date: 2009;
Original page

Keywords: germanium | porous structured film | visible photoluminescence | semiconducting behavior

ABSTRACT
Porous germanium films with good adhesion to the substrate were produced by annealing GeO2 ceramic films in H2 atmosphere. The reduction of GeO2 started at the top of a film and resulted in a Ge layer with a highly porous surface. TEM and Raman measurements reveal small Ge crystallites at the top layer and a higher degree of crystallinity at the bottom part of the Ge film; visible photoluminescence was detected from the small crystallites. Porous Ge films exhibit high density of holes (1020 cm−3) and a maximum of Hall mobility at ~225 K. Their p-type conductivity is dominated by the defect scattering mechanism.
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