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Fabrication and characteristics of porous germanium films

Author(s): Chengbin Jing, Chuanjian Zhang, Xiaodan Zang, Wenzheng Zhou, Wei Bai, Tie Lin and Junhao Chu

Journal: Science and Technology of Advanced Materials
ISSN 1468-6996

Volume: 10;
Issue: 6;
Start page: 065001;
Date: 2009;
Original page

Keywords: germanium | porous structured film | visible photoluminescence | semiconducting behavior

Porous germanium films with good adhesion to the substrate were produced by annealing GeO2 ceramic films in H2 atmosphere. The reduction of GeO2 started at the top of a film and resulted in a Ge layer with a highly porous surface. TEM and Raman measurements reveal small Ge crystallites at the top layer and a higher degree of crystallinity at the bottom part of the Ge film; visible photoluminescence was detected from the small crystallites. Porous Ge films exhibit high density of holes (1020 cm−3) and a maximum of Hall mobility at ~225 K. Their p-type conductivity is dominated by the defect scattering mechanism.
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