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Fabrication and Characterization of Al/p-CuInAlSe2 Thin Film Schottky Diodes

Author(s): Usha Parihar | N. Padha | C.J. Panchal

Journal: Journal of Nano- and Electronic Physics
ISSN 2077-6772

Volume: 5;
Issue: 2;
Start page: 02015-1;
Date: 2013;
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Keywords: Polycrystalline | schottky diodes | Flash evaporation | Current-voltage (I-V) | Capacitance-voltage (C-V) characteristics | Image force | Dipole lowering effects | Interface states | M-S junction templat

Al/p-CuInAlSe2 polycrystalline schottky diodes fabricated by flash evaporation method were undertaken for their electrical analysis at room temperature. Diode parameters of the undertaken diodes were then derived from the current-voltage (I-V) as well as capacitance-voltage (C-V) characteristics. It has been observed that the schottky barrier height deduced from the room temperature I-V is lower to that obtained from the C-V characteristics and is attributed to the fact that I-V analysis includes both the image force and dipole lowering effects and is also reduced by the tunneling and leakage currents. The slope variation of the frequency dependent C – 2-V characteristics for the Al/p-CuInAlSe2 Schottky diode at varying frequency values from 50 kHz to 1 MHz suggests a large density of slow traps or interface states at the M-S junction. As emerging from the parameters values energy band diagram of Al and P-CuInAlSe2 has been reconstructed.
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