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The features of temperature dependence of breakdown voltage in the Au–Ti–n–n+-6H–SiC microwave Schottky barrier diodes

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Author(s): Belyaev A. E. | Boltovets N. S. | Konakova R. V. | Krivutsa V. A. | Kudrik Ya. Ya. | Lebedev A. A. | Abramov A. P. | Lebedev S. P. | Milenin V. V.

Journal: Tekhnika i Pribory SVCh
ISSN 2075-8391

Issue: 2;
Start page: 44;
Date: 2011;
Original page

Keywords: silicon carbide | microwave Schottky barrier diode | temperature coefficient of breakdown voltage

ABSTRACT
The article describes the research on temperature dependence of breakdown voltage in silicon carbide Schottky barrier diodes, Au–Ti–n–n+-6H–SiC, in the 77—573 K temperature range. It is shown that temperature coefficient of breakdown voltage is negative in the above temperature range. This seems to be caused by the effect of deep levels in the space-charge region on the breakdown.
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