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Field Emission of ITO-Coated Vertically Aligned Nanowire Array

Author(s): Lee ChangHwa | Lee SeokWoo | Lee Seung

Journal: Nanoscale Research Letters
ISSN 1931-7573

Volume: 5;
Issue: 7;
Start page: 1128;
Date: 2010;
Original page

Keywords: Field emission | ITO | Nanowire | Top–down

Abstract An indium tin oxide (ITO)-coated vertically aligned nanowire array is fabricated, and the field emission characteristics of the nanowire array are investigated. An array of vertically aligned nanowires is considered an ideal structure for a field emitter because of its parallel orientation to the applied electric field. In this letter, a vertically aligned nanowire array is fabricated by modified conventional UV lithography and coated with 0.1-μm-thick ITO. The turn-on electric field intensity is about 2.0 V/μm, and the field enhancement factor, β, is approximately 3,078 when the gap for field emission is 0.6 μm, as measured with a nanomanipulator in a scanning electron microscope.

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