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Frequency Dependent Switching Characteristics of Back Illuminated OPFET using Finite Difference Methods

Author(s): Rajesh B. Lohani | Jaya V. Gaitonde

Journal: International Journal of Computer Applications
ISSN 0975-8887

Volume: icwet;
Issue: 6;
Date: 2012;
Original page

Keywords: OPFET | photodetector | finite-difference methods | back illumination

OPFET (Optical Field Effect Transistor) is a useful device for optical communication and as photo detector. In this paper, the switching characteristics of the back illuminated OPFET are plotted using finite difference methods by solving the without time dependent continuity equations in which the incident radiation is allowed to enter through the substrate by inserting a fiber partially into the substrate. The switching parameters include transconductance, channel conductance, drain to source resistance, gate to source, gate to drain and drain to source capacitances.
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