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Gasosensing elements on the base of SiPcCl2 films

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Author(s): Alieva Kh. S. | Sulejmanov S. S. | Murshudli M. N.

Journal: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
ISSN 2225-5818

Issue: 2;
Start page: 58;
Date: 2010;
Original page

Keywords: gas-sensitive element | resistive structure | nitrogen oxides | coating films | detecting characteristics of silicon phthalocyanine

ABSTRACT
Influence of technological parameters (reception conditions, heat treatment and thickness) on electric and sensing properties of SiPcCl2 films is analyzed. The films are received by a evaporating method. High sensitivity to oxides of nitrogen is shown. Electric and sensing properties are compared at gas and temperatures influences. Temperature limits of work are determined. Small response and desorption times with high sensitivity allow to use structures with silicon phthalocyanine films in gasosensors.
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