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Gate bias-dependent junction characteristics of silicon nanowires suspended between polysilicon electrodes

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Author(s): Yun-Hi Lee and Sungim Park

Journal: Science and Technology of Advanced Materials
ISSN 1468-6996

Volume: 12;
Issue: 6;
Start page: 065004;
Date: 2011;
Original page

ABSTRACT
Realistic integration of 1D materials into future nanodevices is limited by the lack of a manipulation process that allows a large number of nanowires to be arranged into an integrated circuit. In this work, we have grown Si nanowire bridges using a thin-film catalyst in a batch process at 200 °C and characterized the produced devices consisting of a p+-Si contact electrode, a suspended Si nanochannel, and a polysilicon contact electrode. Both the electrodes and connecting lines are made of Si-based materials by conventional low-pressure chemical vapor deposition. The results indicate that these devices can act as gate-controllable Schottky diodes in integrated nanocircuits.
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