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Growing of semiinsulating Si for high-voltage devices

Author(s): Turtsevich A. S.

Journal: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
ISSN 2225-5818

Issue: 1;
Start page: 35;
Date: 2008;
Original page

Keywords: metal/semiconductor | photosensitivity | short-circuit photocurrent | Schottky barrier height | Fowler region of the spectrum

The effect of the N2O/SiH4 flow ratio ( ) on the peculiarities of initial stages, structural, morphological and electrophysical properties of the SiPOS film has been investigates. The average roughness of thin SiPOS films (Ra) is 0.09 nm (for polysilicon films - 1.52 nm). The films having 2.5-22.0 at.% oxygen have quasi-crystal structure. Explanation of the obtained results on the base of multi-route layer deposition process in SiH4-N2O gas system has been presented. The obtained results have been used for the optimization of SiPOS film deposition process under high-voltage device.
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