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Heterojunctions formed by annealing of GaSe and InSe layered crystals in zinc vapor

Author(s): Kudrynskyi Z. R. | Kovalyuk Z. D.

Journal: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
ISSN 2225-5818

Issue: 6;
Start page: 40;
Date: 2012;
Original page

Keywords: layered crystals | heterojunctions | annealing | spectral characteristics | current-voltage characteristics

The article presents a method of creating heterojunc¬tions based on semiconductors with different lattice types. Substrates manufactured from GaSe and InSe layered crystals were annealed in Zn vapor. This way, n-ZnSe–p-GaSe and n-ZnSe–p-InSe heterojunctions were obtained. The obtained heterojunctions are photo¬sensitive in near and infrared spectral regions. This method opens up greate possibilities of producing heterostructures with a desired sensitivity band.
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