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High Fin Width Mosfet Using Gaa Structure

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Author(s): S.L.Tripathi | Ramanuj Mishra | R.A.Mishra

Journal: International Journal of VLSI Design & Communication Systems
ISSN 0976-1527

Volume: 3;
Issue: 5;
Start page: 111;
Date: 2012;
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Keywords: Gate all around(GAA) | TG FinFET | High K gate oxide | Silicon-On-Insulator(SOI) | Work function | Short channel effect | DIBL | Subthreshold Slope | 3-D Sentaurus TCAD tool.

ABSTRACT
This paper describes the design and optimization of gate-all-around (GAA) MOSFETs structures. The optimum value of Fin width and Fin height are investigated for superior subthreshold behavior. Also the performance of Fin shaped GAA with gate oxide HfO2 are simulated and compared with conventional gate oxide SiO2 for the same structure. As a result, it was observed that the GAA with high K dielectric gate oxide has more possibility to optimize the Fin width with improved performance. All the simulations are performed on 3-D TCAD device simulator.
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Tango Jona
Tangokurs Rapperswil-Jona