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High Frequency Performance of GaN Based IMPATT Diodes

Author(s): B. Chakrabarti | D. Ghosh | M. Mitra

Journal: International Journal of Engineering Science and Technology
ISSN 0975-5462

Volume: 3;
Issue: 8;
Start page: 6153;
Date: 2011;
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Keywords: mm wave IMPATT | GaN IMPATT | Ka-band IMPATT oscillator | simulation of IMPATT

IMPATT is a p+n junction diode reversed bias to breakdown and can generate microwave power when properly embedded in a resonant cavity. Till emergence on 1965 day by day it became more powerful solid state source for microwave as well as mm-wave frequency range. To get higher efficiency and power output different structures like SDR, DDR, DAR, lo-high-lo, etc. were proposed and developed by different scientists over the years. Then the IMPATT development started with different semiconductor materials like GaAs, InP, GaN, etc. along with Silicon to achieve higher efficiency, power output and frequency range. In this paper the performance of GaN based SDR IMPATT have thoroughly studied in terms of (i) electric field profile[E(x)] (ii)normalized current density profile [P(x)] (iii) Susceptance Vs Conductance characteristics (iv)RF power output (v) negative resistivity profile [R(x)] of the diodes through simulation scheme. It is being observed that the efficiency is 17.9% at Ka-band and because of the very high breakdown voltage, power output is as high as1.56W in comparison with other frequency band of operations.
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