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High Speed Capacitor-Inverter Based Carbon Nanotube Full Adder

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Author(s): Navi K | Rashtian M | Khatir A | Keshavarzian P | Hashemipour O

Journal: Nanoscale Research Letters
ISSN 1931-7573

Volume: 5;
Issue: 5;
Start page: 859;
Date: 2010;
Original page

Keywords: Full Adder | Carbon nanotube | Carbon nanotube field effect transistor | High speed | High performance

ABSTRACT
Abstract Carbon Nanotube filed-effect transistor (CNFET) is one of the promising alternatives to the MOS transistors. The geometry-dependent threshold voltage is one of the CNFET characteristics, which is used in the proposed Full Adder cell. In this paper, we present a high speed Full Adder cell using CNFETs based on majority-not (Minority) function. Presented design uses eight transistors and eight capacitors. Simulation results show significant improvement in terms of delay and power-delay product in comparison to contemporary CNFET Adder Cells. Simulations were carried out using HSPICE based on CNFET model with 0.6 V VDD.

Tango Jona
Tangokurs Rapperswil-Jona

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