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I-V Characteristics of Single Electron Transistor Using MATLAB

Author(s): U. Swetha Sree

Journal: International Journal of Engineering Trends and Technology
ISSN 2231-5381

Volume: 4;
Issue: 8;
Start page: 3701;
Date: 2013;
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Keywords: Coulomb Blockade | Orthodox Theory | Quantum Dot | Single Electron Transistor (SET)

Single Electron Transistor (SET) is a key element of current research area of Nano Technology which can offer low power consumption and high operating speed. SETs are often discussed as Nano scaled switching devices because it retains its scalability on an atomic scale and could detect and control the motion of individual electron. The goal of this paper is to review in brief the basic physics of Single Electron Transistor as well as to simulate numerically the Current – Voltage characteristics in the SET based on Master equation for the probability distribution of SET dot obtained from stochastic processusing MATLAB. Also comparison between Field Effect Transistors (FET) and Single electron Transistor (SET) are discussed.

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