Academic Journals Database
Disseminating quality controlled scientific knowledge

Impact of Annealing on CuInSe2 Thin Films and Its Schottky Interface

ADD TO MY LIST
 
Author(s): U. Parihar | J.R. Ray | N. Kumar | R. Sachdeva | N. Padha | C.J. Panchal

Journal: Journal of Nano- and Electronic Physics
ISSN 2077-6772

Volume: 3;
Issue: 1;
Start page: 1086;
Date: 2011;
VIEW PDF   PDF DOWNLOAD PDF   Download PDF Original page

Keywords: Thermal evaporation | CIS thin film | Vacuum annealing | Structural | Morphological | Electrical characterization.

ABSTRACT
The room temperature current–voltage (I-V) characteristics of the Al/p-CuInSe2 Schottky Diodes fabricated on thermally evaporated CIS thin films, before and after annealing, were studied. Prior to their diode formation, the undertaken CIS thin films were compared on the basis of structural, morphological and electrical investigations. Wherein, annealed films showed an increase in the grain size and carrier concentration values while decrease in resistivity. I-V analysis of the Schottky diodes depicted decrease in the barrier heights and increase in ideality factors of those formed on annealed films. The diodes, thus, indicated the existence of barrier inhomogenity at the M-S interface. The annealed Schottky diodes also demonstrated better ideality factor values with increased thickness of CIS layer.
Affiliate Program     

Tango Rapperswil
Tango Rapperswil